MANUFACTURING METHOD OF TWO-DIMENSIONAL TRANSITION-METAL CHALCOGENIDE THIN FILM

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

15/060,615

專利證號

US 9,460,919

專利獲證名稱

MANUFACTURING METHOD OF TWO-DIMENSIONAL TRANSITION-METAL CHALCOGENIDE THIN FILM

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2016/10/04

技術說明

本發明提供一種過渡金屬硫族化物二維薄膜的製 備方法，包含提供基板、提供作用層、提供反應源及 提供微波，基板為具有偶極矩的材料製成，作用層設 於基板上，作用層具有預設厚度且包含過渡金屬化合 物。微波使基板産生熱能，以前述熱能使反應源與作 用層産生反應並於基板上形成過渡金屬硫族化物二維 薄膜，其中過渡金屬硫族化物二維薄膜包含複數單元 ，控制預設厚度使各單元沿預設方向排列。藉此可減 少過渡金屬硫族化物二維薄膜生成的過程中所需要的 熱預算成本，並藉由預設厚度的控制進一步調控過渡 金屬硫族化物二維薄膜中單元的排列方向。 The Present disclosure provides a manufacturing method of two-dimensional transition-metal chalcogenide thin film which includes providing a substrate, a reaction film, a source, and a microwave. The substrate is made of material which contains dipoles. The reaction film is disposed on the substrate and has a predefined thickness. The substrate heated by the microwave produces a heat energy to the reaction film and the source, a chemical reaction takes place and a two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal chalcogenide thin film includes a plurality of elements. The elements can align in a predefined direction by controlling the value of the predefined thickness. Therefore, the high cost of the heat energy during the manufacturing process of the two-dimensional transition-metal chalcogenide thin film can be reduced, and the aligning direction of elements of the two-dimensional transition-metal chalcogenide thin film can be controlled via controlling the predefined thickness.

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