二維半導體元件、光電單元與二維半導體元件的製造方法

專利類型

發明

專利國別 (專利申請國家)

大陸

專利申請案號

201910249434.8

專利證號

CN111769201B

專利獲證名稱

二維半導體元件、光電單元與二維半導體元件的製造方法

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2023/06/09

技術說明

【中文】本發明主要提出一種二維半導體元件，包括：一二維半導體材料層、 一超強酸作用層與一超強酸溶液；其中，該二維半導體材料層係由具半導體特 性的過渡金屬硫化物材料製成，且該超強酸作用層係形成於該二維半導體材料 層之上。特別地，本發明之製造方法以氧化物材料製成所述超強酸作用層，並 接著超強酸溶液應用於該超強酸作用層，令該超強酸溶液可以藉由擴散作用進 入該超強酸作用層之中。並且，實驗結果係證實，利用擴散作用令超強酸溶液 被包含於所述超強酸作用層之中，這樣不僅可以使用超強酸溶液對二維半導體 材料層執行化學處理，同時超強酸溶液於該二維半導體材料層之上所實現的發 光效率增強效果，其亦不會因為二維半導體材料層於進行後續製程步驟時接觸 水與/或有機溶劑而消失。 【英文】The present invention mainly discloses a two-dimensional semiconductor device (TDSD), comprising: a two-dimensional semiconductor material (TDSM) layer, a superacid action layer and a superacid solution. The TDSM layer is made of transitionmetal dichalcogenides (TMDCs) having semiconductor characteristics, and the superacid action layer is formed on the TDSM layer. In a manufacture method proposed by the present invention, an oxide material is adopted for making the superacid action layer, such 第2頁，共 2 頁(發明摘要) that the superacid solution is subsequently applied to the superacid action layer so as to make the superacid solution enter the superacid action layer by diffusion. Moreover, experimental data have proved that, letting the superacid solution diffuse into the superacid action layer can not only apply a chemical treatment to the TDSM layer through the superacid solution, but also make the TDSD have a benefit of have a luminosity enhancement. In addition, the experimental data have also proved that the luminosity enhancement would not be reduced even if the TDSD contacts with water and/or organic solution during other subsequent manufacturing processes.

備註

連絡單位 (專責單位/部門名稱)

智財技轉組

連絡電話

03-5715131-62219

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