三閘極場效電晶體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

108102436

專利證號

I 697121

專利獲證名稱

三閘極場效電晶體

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2020/06/21

技術說明

一種三閘極場效電晶體，包括基板、淺溝槽結構的絕緣隔離、至少一鰭片結構、閘極特徵、源極區域、汲極區域、以及第一鰭片隔離氣隙。淺溝槽結構的絕緣隔離位於基板上，並界定出主動區域。鰭片結構設置於基板上，並位於主動區域內。閘極特徵跨越鰭片結構。源極區域和汲極區域位於主動區域內，並設置於閘極特徵的相對兩側。第一鰭片隔離氣隙位於鰭片結構與淺溝槽結構的絕緣隔離之間。當三閘極場效電晶體包括兩個以上鰭片結構時，三閘極場效電晶體還包括位於相鄰的兩個鰭片結構之間的隔離氣隙。 A tri-gate field effect transistor includes a substrate, a shallow trench isolation structure, at least one fin structure, a gate feature, a source region, a drain region, and a first fin isolation air gap. The shallow trench isolation structure is formed on the substrate and defines an active area. The fin structure is placed on the substrate, and located in the active area. The gate feature spans the fin structure. The source region and the drain region are located in the active area and positioned at opposite sides of the gate feature. The first fin isolation air gap is located between the fin structure and the shallow trench isolation structure. When the tri-gate field effect transistor includes more than two fin structures, the tri-gate field effect transistor further includes an air gap between two adjacent fin structures.

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