磁控濺鍍機

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

101105294

專利證號

I 532866

專利獲證名稱

磁控濺鍍機

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2016/05/11

技術說明

提出一簡單、有效地的蝕刻軌跡控制修正方案適用於現有直流電漿濺鍍機系統藉此改變蝕刻 軌跡大小及形狀提供高沉積率及較好的靶材利用率。藉由適當加上鐵環及補償磁通，越過靶材表面的電子可被侷限且可適當控制靶材蝕刻形狀。因此靶材可更有效利用且及材沉積率也增加。選用的三種典型形式均展現靶材蝕刻形狀可被精準控制於指定的參考輪廓且有著超過98.78%相似，此外基材濺鍍率也間接增強至20.87%到23.06%之間。經證實此項精進可明確改善系統性能。 To supply higher deposition rate and better target utilization, simple and cost-effective adjustments that can be applied to the existing DC magnetron sputtering systems are desired By attaching adequate iron annulus and compensation magnetizations, electron trajectories near the target surface can be confined and the target erosion patterns can then be properly controlled. Hence, the target can be more effectively utilized and the substrate deposition rate can also be indirectly enhanced. Three typical patterns have been selected and promising results have showed that the erosion patterns on the targets can be precisely controlled to the designated reference profiles with resemblances higher than 98.78%, along with the substrate sputtering rate enhancements in the range of 20.87%-23.06%. From such verifications, clearly the refinement concepts for better the system performance can be confirmed.

備註

本部(第1080005689號)同意該校108年01月21日中產營字第1081400090號函申請終止維護案。

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