ELECTRICAL CONNECTING STRUCTURE HAVING NANO-TWINS COPPER AND METHOD OF FORMING THE SAME

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

16/836,955

專利證號

US 11,145,619

專利獲證名稱

ELECTRICAL CONNECTING STRUCTURE HAVING NANO-TWINS COPPER AND METHOD OF FORMING THE SAME

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2021/10/12

技術說明

一種形成具有奈米雙晶銅之電連接結構的方法，此方法包含：(i)形成第一奈米雙晶銅層，第一奈米雙晶銅層包含多個第一奈米雙晶銅晶粒；(ii)形成第二奈米雙晶銅層，第二奈米雙晶銅層包含多個第二奈米雙晶銅晶粒；以及(iii)接合第一奈米雙晶銅層之表面與第二奈米雙晶銅層之表面，使至少部分的第一奈米雙晶銅晶粒成長至第二奈米雙晶銅層中，或者至少部分的第二奈米雙晶銅晶粒成長至第一奈米雙晶銅層中。在此亦揭露一種奈米雙晶銅之電連接結構。 Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of: (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) bonding a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least portions of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least portions of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.

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