記憶體裝置及其操作方法Memory device and operation method thereof

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

100139485

專利證號

I 441327

專利獲證名稱

記憶體裝置及其操作方法Memory device and operation method thereof

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2014/06/11

技術說明

今日，記憶體元件扮演了儲存資訊的重要角色，而只要有兩種不同組態可被區分的元件，即可拿來當作記憶體元件。電阻式記憶體為利用元件高低電阻態的轉換，作為元件不同的記憶組態之元件，而且因為電阻式記憶體的結構簡單，所以未來發展備受肯定。但電阻式記憶體的原理目前尚未明朗，所以許多科學家紛紛投入這個領域。目前電阻式記憶體最常採用之主動層材料為過渡金屬氧化物，而導電材料皆可作為其電極使用。本技術利用合適的主動層，並搭配適當的電極材料，可增進電阻式記憶體之記憶組態。 Today, the memory device to store information plays an important role, and as long as there are two different configurations can be distinguished, it can be used as memory devices. Resistive random access memory (RRAM) switches between high-resistance state (HRS) and low-resistance state (LRS) to serve as two different memory states. Because resistive memory structure is simple, so the future development are well recognized. However, the principle of resistive memory is not yet clear, many scientists have invested in this area. The most widely used material of active layer in RRAM is transition metal oxides; simultaneously, all electrically conductive materials could be used as the electrode in RRAM. This technique applies appropriate active layer in combination with suitable electrodes to increase in the memory states of RRAM.

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本部(收文號1060000114)同意該校105年12月30日成大研總字第1054501055號函申請終止維護專利

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