晶圓常溫乾燥方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

110119096

專利證號

I 784545

專利獲證名稱

晶圓常溫乾燥方法

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2022/11/21

技術說明

一種晶圓常溫乾燥方法，用以解決習知晶圓乾燥製程導致晶圓上的電晶體微結構內縮倒塌的問題。係包含：一清洗階段，將一待工元件置入一清洗溶劑中；一反應階段，將該待工元件連同該清洗溶劑放入一反應腔室，並注入一超臨界流體於該反應腔室內，該超臨界流體的臨界溫度低於常溫，增加該反應腔室的壓力，使該清洗溶劑溶解於該超臨界流體；及一洩壓階段，在該清洗溶劑完全溶解於該超臨界流體後，釋放該反應腔室的壓力，將該超臨界流體連同該清洗溶劑排放出該反應腔室。 A method for drying wafer at room temperature is provided to solve the problem that the conventional process of drying wafer causes collapsing of the microstructure of transistor on the wafer. The method includes a cleaning step, a reacting step and a pressure relieving step. The cleaning step is putting a processing component into a cleaning solvent. The reacting step is putting the processing component with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing the pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. The critical temperature of the supercritical fluid is below room temperature. After completely dissolving the cleaning solvent. The pressure relieving step is releasing the pressure in the reaction chamber and discharging the supercritical fluid with the cleaning solvent out of the reaction chamber.

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