薄膜電晶體THIN FILM TRANSISTOR

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/661,707

專利證號

US 9,281,411 B1

專利獲證名稱

薄膜電晶體THIN FILM TRANSISTOR

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2016/03/08

技術說明

由於半導體技術的進步，逐漸發展出薄膜電晶體(Thin Film Transistor，TFT)元件作為電子開關，並廣泛地使用於各式電子器材內，以平面顯示器為例，可利用薄膜電晶體作為控制畫素之電荷儲存電容(storage capacitor)的充放電開關元件。本發明揭示一種薄膜電晶體，用於解決載子遷移率不佳問題，該薄膜電晶體包含一基板；一閘極，設於該基板；一絕緣層，設於該閘極；一源極，設於該絕緣層；一汲極，設於該絕緣層；及一主動層，位於該源極及該汲極之間，該主動層由一底部層、一中間層及一頂部層堆疊而成，該底部層設於該絕緣層，該中間層的導電率大於該底部層的導電率，該底部層的導電率大於該頂部層的導電率。藉此，可確實解決上述問題。 This invention discloses a thin film transistor which is used to solve a problem of carrier mobility of conventional thin film transistors is poor. The thin film transistor comprises a substrate, a gate, an isolating layer, a source, a drain and an active layer. The gate is mounted on the substrate. The isolating layer is mounted on the gate. The source is mounted on the isolating layer. The drain is mounted on the isolating layer. The active layer is located between the source and the drain, and formed by stacking a bottom layer, a middle layer and a top layer. The bottom layer is mounted on the isolating layer. The conductivity of the middle layer is larger than the conductivity of the bottom layer. The conductivity of the bottom layer is larger than the conductivity of the top layer. Thus, it can actually resolve the said problem.

備註

本會(收文號1120039878)同意該校112年6月28日中產營字第1121400592號函申請終止維護專利(國立中山大學)

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