ELECTRODEPOSITED NANO-TWINS COPPER LAYER AND METHOD OF FABRICATING THE SAME

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

15/238,345

專利證號

US 10,094,033 B2

專利獲證名稱

ELECTRODEPOSITED NANO-TWINS COPPER LAYER AND METHOD OF FABRICATING THE SAME

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2018/10/09

技術說明

本發明係有關於一種電鍍沉積之奈米雙晶銅金屬層、其製備方法、以及包含其之基板。本發明之電鍍沉積之奈米雙晶銅金屬層之50%以上的體積包括複數個晶粒，該複數個晶粒彼此間係互相連接，該每一晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成，且相鄰之該晶粒間之堆疊方向之夾角係0至20度。本發明之電鍍沉積之奈米雙晶銅金屬層具有非常好的抗電遷移性、硬度以及楊式係數，可以大幅度的提升電子產品的可靠度。生產成本低且與半導體製程完全相容。 An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young’s modulus. Its manufacturing method is also fully compatible to semiconductor process.

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