串聯式複數光二極體結構

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099119631

專利證號

I 425626

專利獲證名稱

串聯式複數光二極體結構

專利所屬機關 (申請機關)

國立中央大學

獲證日期

2014/02/01

技術說明

一種串聯式複數光二極體結構，係由一分光裝置、一光偵測器模組及一負載組成，且該光偵測器模組係由數個光偵測器組成而連接於該負載之輸入與輸出之間；其中該分光裝置係用以反射一入射光，並對該入射光進行分光為多光束，使該入射光得以照射每一光偵測器，俾供由每一光偵測器激發一光電流信號以驅動該負載。藉此改良成至少可串聯二個以上之光偵測器結構，可使整體元件在相同頻寬（Bandwidth）下，藉由增加元件面積而提供更大電流之輸出，以證明由本元件在頻寬效率（BRP）與飽和電流-頻寬乘積（SCBP）之特性能有重大之改進以達到高速、高響應度及高頻寬之表現，俾可讓射頻光纖通訊系統得以簡化進而符合成本效益者。 We demonstrate a revolutionary structure of high-power photodiodes (PDs): linear-cascade PDs (LCPDs), for further improving the saturation-current-bandwidth product (SCBP) performance. Compared with the traditional power combining technique: traveling-wave photodiode (TWPDs), our demonstrated LCPDs structure can greatly release the SCBP performance without using complex optical/electrical distributed structure, downscaling the active area of unit PD, and reducing the load resistance (output RF power). By use of the near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with flip-chip bonding package as a unit PD in our LCPDs structure, it exhibits greatly improvement in SCBP performances as compared to those of controlled device with a single NBUTC-PD. Record-high saturation-current-bandwidth product (7500mA-GHz, 91GHz) of two-element LCPDs under a 50 Ohm load can be achieved.

備註

本部(收文號1080048903)同意該校108年7月19日中大研產字第1081400892號函所報終止維護專利。

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