TRANSFORMER CIRCUIT AND MANUFACTURING METHOD THEREOF

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/713,370

專利證號

US 9,818,528 B2

專利獲證名稱

TRANSFORMER CIRCUIT AND MANUFACTURING METHOD THEREOF

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2017/11/14

技術說明

晶片變壓器廣泛用於CMOS 功率放大器作為阻抗轉換和功率結合之用。從一個負載阻抗ZA轉換到ZB使用一個理想的變壓器且接著匹配至Zopt藉由kLpri電感，而k為耦合係數、Lpri為等效主側電感。一旦kLpri的數值不足夠，一個額外的並聯電容CP可被用來將ZC阻抗點移至Zopt，但要付出匹配頻寬導致電路較為窄頻。因此足夠大的k和Lpri將是寬頻CMOS PAs不可或缺要素，然而一般來說k通常小於0.8，因此PA的頻寬主要決定於Lpri。小型CLCVT結構不僅能提供足夠的等效主側電感還可降低電流電阻壓降效應，在保有與分佈式主動變壓器(DAT)相似之轉換效率特性下所需功率結合變壓器的外徑尺寸將大幅減少66%。 On-chip transformers are widely used in CMOS PAs for both impedance transformation and power combining. A load impedance of ZA is scaled to ZB by an ideal transformer and subsequently matched to Zopt by an inductor of kLpri, where k is the coupling coefficient and Lpri is the equivalent primary inductance. Should kLpri be insufficient, an additional shunt capacitor, CP, can be used to move from ZC to Zopt at the expense of matching bandwidth. Therefore, sufficiently large k and Lpri are essential conditions for wideband PAs with on-chip power-combining transformers. Since the value of k is generally below 0.8, the bandwidth of a PA is dominated by Lpri. The compact structure of the CL-CVT provides sufficient primary inductance and reduced IR-drop impacts. The outer diameter required by the CL-CVT is reduced by 66% compared to the distributed active transformer with similar performance.

備註

連絡單位 (專責單位/部門名稱)

產學合作總中心

連絡電話

33669945

網址