氧化鋅奈米結構氣體感測器及其製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099146637

專利證號

I 428591

專利獲證名稱

氧化鋅奈米結構氣體感測器及其製造方法

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2014/03/01

技術說明

本發明之一種氧化鋅奈米結構之氣體感測元件是以半導體製程技術之黃光微影、物理性熱蒸鍍以及水熱法等，來進行氣體感測元件之製作。首先分別利用丙酮或鹽酸等溶液清洗試片，來去除基板表面之氧化層與雜質，接著利用熱蒸鍍技術將鉻/鉑金屬沉積於處理後的試片之上，並製作指叉狀之金屬電極。之後再以濺鍍方式將晶種沉積到處理後的試片表面及指叉狀電極之上。最後利用水熱法技術製作氧化鋅奈米柱狀結構於試片表面上。其中經由電極間距的縮短造成元件表面氧化鋅奈米柱狀結構的分部型態不同，進一步改善感測元件對於氣體之靈敏度。結果顯示，經電極間距縮小後所製備之氣體感測元件，其靈敏度隨間距縮短而增加感測能力。此外，本元件可長時間操作於高溫之環境下，有極佳之可靠度及耐用度。因此，本發明之感測器除了具備高感測靈敏度外，並具有壽命長的優點。 In this invention, the sensing device was fabricated by using photolithology, thermal evaporation, RF sputtering, and hydrothermal methods. First, the substrate was cleaned by acetone and hydrochloric acid. After the pretreatment, Cr and Pt metals were deposited on the surface of the pretreated substrate to form the multifinger electrodes by thermal evaporation method. Then, the ZnO seed-layer was deposited on the substrate by using RF sputtering. Finally, ZnO nanorods were grown via hydrothermal route on the substrate and electrodes. It was found that the ZnO nanorods-based sensor showed the enhancement of sensing response with shrinking electrodes spacing. Besides, the ammonia sensing responses of the studied device were also improved by reducing the electrode spacing. In addition, the studied devices could be stably operated at higher temperature for a long time. Consequently, the invented sensing device showed advantages of high sensitivity and prolonged lifetime.

備註

本部(收文號1060000114)同意該校105年12月30日成大研總字第1054501055號函申請終止維護專利

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