M面氮化鎵的製備方法FABRICATION OF M-PLANE GALLIUM NITRIDE

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

105117061

專利證號

I 583831

專利獲證名稱

M面氮化鎵的製備方法FABRICATION OF M-PLANE GALLIUM NITRIDE

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2017/05/21

技術說明

一種M面氮化鎵的製備方法，其無需使用鋁酸鋰、鎵酸鋰或碳化矽等高價基板，即可以成長M面氮化鎵者。本發明之M面氮化鎵的製備方法包含：提供一氧化鋅六角柱，該氧化鋅六角柱具有一成長面，該成長面係為垂直重力方向之M面；及自該氧化鋅六角柱之成長面成長一氮化鎵層。本技術利用簡易的水熱法成長高品質低成本的氧化鋅微米柱,利用氧化鋅微米柱之M面為成長基底,以電漿輔助分子束磊晶術在超高真空與高純度的成長原之下成長M面氮化鎵磊晶層,由TEM的結果顯示所成長的為單一成長面。 A fabrication of M-plane gallium nitride which is able to grow M-plane gallium nitride without the need of expensive substrate, such as LiAlO2, LiGaO2, or SiC. The fabrication of M-plane gallium nitirde includes preparing a zinc oxide hexagon prism having a growth surface perpendicular to a direction of gravity; and growing a gallium nitride layer from the growth surface of the zinc oxide hexagon prism. We grow micro-ZnO rods on Si (100) by hydrothermal methods, and thereafter use the micro-ZnO rods as a substrate to grow nonpolar GaN epifilms.We demonstrate that high-quality M-plane GaN epi-layers were grown on ZnO (10¯10) micro-rod substrate with a rod size of 1∼3μm by plasma-assisted molecular beam epitaxy (MBE). The transmission electron microscope (TEM) analysis confirmed crystalline relation of M-plane GaN on ZnO (10¯10) micro-rod.

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