薄膜電晶體的製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

109125411

專利證號

I 756757

專利獲證名稱

薄膜電晶體的製造方法

專利所屬機關 (申請機關)

國立中山大學

獲證日期

2022/03/01

技術說明

一種薄膜電晶體，用以解決習知薄膜電晶體在防止氫擴散的製程效率低的問題。係包含：一基板；數層薄膜，疊層於該基板，各該薄膜係一閘極絕緣層、一主動層、一緩衝層、一介電層或一保護層；及至少一含氟薄膜，與該數層薄膜相互疊層，該含氟薄膜係一摻氟絕緣層、一摻氟主動層、一摻氟緩衝層、一摻氟介電層或一摻氟保護層。本發明另揭示該薄膜電晶體的製造方法。 A thin film transistor is used to solve a problem of the low efficiency of the conventional thin film transistor to prevent hydrogen dispersion. This thin film transistor comprises a substrate, a plurality of thin films, and at least one fluoro-containing thin film, which are laminated on each other. Each thin film is a gate insulating layer, an active layer, a buffer layer, a dielectric layer or a passivation layer. The fluoro-containing thin film is a fluorine-included insulating layer, a fluorine-included active layer, a fluorine-included buffer layer, a fluorine-included dielectric layer or a fluorine-included passivation layer. The invention further includes a method for manufacturing the thin film transistor.

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