採用對準式背向閘極及負電容鐵電介電質之多閘極高電子遷移率場效電晶體及其製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

106121146

專利證號

I 608607

專利獲證名稱

採用對準式背向閘極及負電容鐵電介電質之多閘極高電子遷移率場效電晶體及其製造方法

專利所屬機關 (申請機關)

國立臺灣師範大學

獲證日期

2017/12/11

技術說明

本發明揭露一種多閘極高電子遷移率場效電晶體及其製造方法。多閘極高電子遷移率場效電晶體包含基材、通道層、阻障層、複數個閘極、複數個對準式背向閘極及負電容鐵電介電質。通道層設置於基材上方。阻障層設置於通道層上方。複數個閘極分別設置於阻障層上方並往下延伸至阻障層內。複數個對準式背向閘極分別相對於該複數個閘極而設置於基材下方並往通道層延伸。負電容鐵電介電質分別設置於複數個閘極與阻障層之間以及複數個對準式背向閘極與基材之間。 A multi-gate HEMT with aligned internal gate and negative capacitance ferroelectric dielectrics and manufacturing method thereof are disclosed. The multi-gate HEMT includes a substrate, a channel layer, a barrier layer, gate electrodes, aligned internal gate electrodes and negative capacitance ferroelectric dielectrics. The channel layer is disposed above the substrate. The barrier layer is disposed above the channel layer. The gate electrodes are disposed above the barrier layer and extended into the barrier layer. The aligned internal gate electrodes are disposed under the substrate opposite to the gate electrodes respectively and extended into the channel layer. The negative capacitance ferroelectric dielectrics are disposed between the gate electrodes and the barrier layer and between the aligned internal gate electrodes and the substrate respectively.

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