半導體元件之閘極半舉離製程Half lift-off processes to fabricate a gate electrode of a semiconductor component

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102106084

專利證號

I 505378

專利獲證名稱

半導體元件之閘極半舉離製程Half lift-off processes to fabricate a gate electrode of a semiconductor component

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2015/10/21

技術說明

揭示一種半導體元件之閘極半舉離製程。形成第一光阻層於半導體元件上，以覆蓋其源極與汲極，第一光阻層圖案化後形成有閘極開孔。之後，沉積金屬層薄膜於第一光阻層上，以形成在閘極開孔內之閘極金屬。之後，形成第二光阻層於金屬層薄膜上，第二光阻層圖案化後形成為在閘極開孔上之蝕刻阻擋墊。經蝕刻金屬層薄膜並同時移除該兩光阻層，以舉離金屬層薄膜在閘極開孔外之部位並顯露閘極金屬與金屬層薄膜之殘留部位。最後，以超音波震盪方式移除該金屬層薄膜之殘留部位。故能提升閘極舉離成功率並改善舉離時光阻對金屬層薄膜厚度比例的限制。 Disclosed is a half lift-off processes to fabricate a gate electrode of a semiconductor component. A first photoresist is formed on the semiconductor component to cover its source and drain. By patternizing the first photoresist, a gate opening is formed. Next, a metal film is deposited on the first photoresist and fills in the gate opening to form as a gate metal. Next, a second photoresist is formed on the metal film. By patternizing the second photoresist, an etching-resisting mask is formed on the gate opening. After the metal film is etched and then the first and second photoresistes are simultaneously removed, the portion of the metal film out of the gate opening is lifted off to expose the gate metal and the residue portion of the metal film. Finally, by ultrasonic oscillation, the residue portion of the metal film is removed. Accordingly, this process can improve the lift-up success rate and lessen the limit of thickness ratio of photoresist to metal film for lift-off process.

備註

本部(收文號1080009071)同意該校108年2月1日成大研總字第1081100901號函申請終止維護專利

連絡單位 (專責單位/部門名稱)

企業關係與技轉中心

連絡電話

06-2360524

網址