具複合材料配比之可變電阻絕緣層及其微電子元件應用VARIABLE RESISTANCE TYPE INSULATION LAYER HAVING A COMPOSITE MATERIAL MATCHING AND ITS APPLICATION IN MICROELECTRONIC COMPONENT

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

104117721

專利證號

I 567740

專利獲證名稱

具複合材料配比之可變電阻絕緣層及其微電子元件應用VARIABLE RESISTANCE TYPE INSULATION LAYER HAVING A COMPOSITE MATERIAL MATCHING AND ITS APPLICATION IN MICROELECTRONIC COMPONENT

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2017/01/21

技術說明

揭示一種具複合材料配比之可變電阻絕緣層及其微電子元件應用，微電子元件包含一基板以及一在基板上之金屬-絕緣層-金屬結構。金屬-絕緣層-金屬結構之絕緣層係為由無機複合材料組成之溶膠凝膠成膜層，例如鈦酸鎂-鈦酸鈣複合材料，利用溶膠凝膠法製備複合材料並應用於金屬-絕緣體-金屬結構之電阻式記憶體元件中作為絕緣層。該電阻式記憶體元件展現好的電阻轉換特性，此複合材料也可以做為介電層及鈍化層應用在電晶體中，並製成溫度低，且可應用於可撓式裝置上。 Disclosed are a variable resistance type insulation layer having a composite material matching and its application in microelectronic component. The component includes a base and a MIM (Metal-Insulator-Metal) structure on the base. The insulator of the MIM structure is a layer of sol-gel film consisting of inorganic composite materials, for example MgTiO3-CaTiO3 composite prepared by sol-gel method, to produce metal-insulator-metal structured resistive random-access memory device as the insulator layer. The resistor type memory component exhibits well resistive switching properties. And the composite can be used as the dielectric as well as passivation layer for MOSFET. Moreover, its low temperature fabricating process could apply to flexible devices.

備註

本部(收文號1090031211)同意該校109年5月29日成大技轉字第1095600304號函申請終止維護專利(成大)

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