介電質熔絲型記憶電路及其操作方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

105124125

專利證號

I 606448

專利獲證名稱

介電質熔絲型記憶電路及其操作方法

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2017/11/21

技術說明

本發明提出一種可一次性寫入(one time programming)並重複隨機讀取的積體電路記憶體(memory)，此記憶體係利用介電質熔絲(dielectric fuse)的方式，作為儲存元件的寫入操作，其主要特徵為，施加一電場於介電質使得其內之離子被析出或介電質熔毀，造成介電質結構損壞，呈穿孔狀，該電場乃運用稍高於hard-breakdown的電壓但很短時間的脈衝達成; 經由介電質穿隧的電流將由寫入前的高電導(低電阻)態轉變為低電導(高電阻)態，此機制已整合於超大型積體電路中完成積體電路記憶體之驗證，並利用CMOS製程實現之。 This invention proposed one kind of one-time programming and repeatably random read integrated circuit memory. The storage device of this memory programs the information by using dielectric-fuse mechanism. The main characteristics of dielectric fuse mechanisms is that by applying an electric field on the dielectrics, the ions or atoms in the dielectrics are being drifted-out or evaporated, which makes damage of the dielectric structure in a form of porosity, and the conductivity (resistivity) of tunneling current through the dielectrics changes the state from high conductivity (resistivity) to low conductivity (resistivity). The dielectric fuse mechanism has been integrated in VLSI circuits, completed the validation, and implemented by the fabrication of CMOS process.

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