半導體發光晶片的製作方法及半導體發光晶片Method of manufacturing semiconductor light-emitting chip and semiconductor light-emitting chip

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099132356

專利證號

I 395350

專利獲證名稱

半導體發光晶片的製作方法及半導體發光晶片Method of manufacturing semiconductor light-emitting chip and semiconductor light-emitting chip

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2013/05/01

技術說明

一種半導體發光晶片的製作方法，先在磊晶基材上製作出橫向結構、且包括第一、二電極的半導體發光晶片半成品，接著將永久基材連接在半導體發光晶片半成品上，之後，移除磊晶基材且自移除磊晶基材的裸露面移除半導體發光晶片半成品的部分結構而讓先前製作的第一、二電極裸露，即製得半導體發光晶片。本發明還提供一種電極不遮覆出光面的半導體發光晶片。被移除之磊晶基材上可經由清潔後,再度重複被使用, 不僅可製作出超高效率與亮度之發光二極體, 更可節省磊晶成本, 使得發光二極體之$/lm可有效提升. This invention provides a method of manufacturing a semiconductor light-emitting chip. The first step is to product semi-finished products on a epitaxial substrate, wherein the semi-finished products are lateral structure and each one has a first electrode and a second electrode. Then, to connect a permanently substrate to the semi-finished products and to remove the epitaxial substrate, and to remove the partial structure of the semi-finished products to exposed the first and second electrode, that is obtained semiconductor light-emitting chips. This invention also provides a semiconductor light-emitting chip which has a complete light-emitting interface.

備註

連絡單位 (專責單位/部門名稱)

企業關係與技轉中心

連絡電話

06-2360524

網址