N型有機薄膜晶體管、雙載子場效應晶體管、及其製備方法

專利類型

發明

專利國別 (專利申請國家)

大陸

專利申請案號

201110461557.1

專利證號

1855119

專利獲證名稱

N型有機薄膜晶體管、雙載子場效應晶體管、及其製備方法

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2015/11/25

技術說明

使用蠶絲蛋白當作閘極介電層，選擇適當的N型及P型有機半導體層時，其N型有機薄膜電晶體以及雙載子場效應電晶體的場效應載子遷移率比已發表的數值高很多。 本發明係有關於一種N型有機薄膜電晶體、雙載子場效應電晶體、及其製備方法，該N型有機薄膜電晶體係包括：一基板﹔一閘極，係設置於該基板上﹔一閘極介電層，係覆蓋該閘極，且該閘極介電層之材質係蠶絲蛋白﹔一緩衝層，係設置於該閘極介電層上，且該緩衝層之材質係五苯環﹔一N型有機半導體層，係設置於該緩衝層上﹔以及一源極與一汲極，其中，該N型有機半導體層、該緩衝層、該源極、以及該汲極係配置於該閘極介電層上方。 When silk protein is used as gate dielectric together with appropraite N- and P-type semiconducting layers, the filed-effect mobilities of N-type organic thin film transistors and ambipolar filed-effect transistors are greatly enhanced. An N-type organic thin film transistor, ambipolar field-effect transistor, and method of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain are disposed over the gate dielectric layer.

備註

本部(收文號1050080009)同意該校105年10月5日清智財字第1059005183號函申請終止維護專利

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