一種薄膜電晶體結構

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

106119347

專利證號

I 636568

專利獲證名稱

一種薄膜電晶體結構

專利所屬機關 (申請機關)

逢甲大學

獲證日期

2018/09/21

技術說明

複晶矽薄膜電晶體相較於非晶矽薄膜電晶體，擁有較高的電子遷移 率，因此廣泛的應用在主動式液晶顯示器。但是元件在汲極端的高 電場卻導致了許多不理想效應，如漏電流效應、熱載子效應、扭結 效應，因此為了改善在汲極端的高電場提出了許多方式例如 ：Offset、淺摻雜汲極(LDD)、增厚源汲極(RSD)、Field Plate(場 版)等等。 其中RSD結構是近年來常被使用去改善元件特性的薄膜電晶體設計 之一，文獻中對於RSD降低電場的機制解釋都是以汲極端的厚度增加 使得發生在汲極端的高電場可以被大汲極空間宣洩而降低，藉此改 善元件的特性，我們往年在元件設計時，也運用了很多RSD的設計概 念。近年來當我們在變化我們設計的元件結構及實驗量測數據增多 時，我們發現汲極端的厚度並非造成RSD電場降低的主要原因，我們 實驗室先利用ISE-TCAD元件與製程模擬軟體先行模擬大量的各式RSD (Raised Source/Drain)相關元件結構後，利用模擬軟體展示的空間 電場電流與摻雜分佈以協助我們進一步解釋RSD結構對元件特性改善 的真正原因。 因此我們希望利用數個RSD (Raised Source/Drain)的結構，透過 改變汲極端的製程條件來探討其降低電場的真正原因，並利用ISETCAD元件與製程模擬的模擬以及實作數據的量測，將RSD (Raised Source/Drain)降低汲極端電場的機制重新作一個詳細的解釋與探討 Poly-Si TFTs are widely used in active-matrix liquid crystal display because of their high field effect mobility and driving current comparing with amorphous silicon. However, poly-Si TFTs have undesirable effects due to a high electric field near the channel/drain junction region to make the impact ionization that leads to a serious kink effect. Therefore, many studies, such as offset, lightly doped drain (LDD), and raised source/drain (RSD) structure, had been proposed to reduce the drain electric field. In recent years, RSD structure which is one of thin film transistor designs is often used to improve the device characteristic. A variety of papers, the mechanism explain about electric field could be reduced by RSD is the thickness increased of drain so that a high electric field occurred in the big drain region can be dispersed , thereby improving the characteristics of the device. In previous years, we also use a lot of RSD design concept to design TFT devices. Recently, when we changed the structure of our device design and experimental measurement data increases, we found that the thickness of the drain is not the main reason for reducing the electric field. We use ISE-TCAD to simulate a large number of all kinds of RSD structure, ISETCAD exhibited electric field current and the doping profile to help us explain the real cause of RSD structure on the device characteristics improved. Therefore, we hope to use of several RSD structure by changing the drain of process conditions to explore the lower field of the real reason. We will use simulation of ISE-TCAD and measurement actual data to explain mechanism why the drain field can be reduced by RSD and make a detailed explanation and discussion.

備註

本部(收文號1110042889)同意該校111年7月7日逢產字第1110014339號函申請終止維護專利(逢甲大學)

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