包含具有Cu3Sn之接合結構及其製備方法ELECTRICAL CONNECTING ELEMENT HAVING NANO-TWINNED COPPER, METHOD OF FABRICAITNG THE SAME, AND ELECTRICAL CONNECTING STRUCTURE COMPRISING THE SAME

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

13/973,900

專利證號

US 8,957,323 B2

專利獲證名稱

包含具有Cu3Sn之接合結構及其製備方法ELECTRICAL CONNECTING ELEMENT HAVING NANO-TWINNED COPPER, METHOD OF FABRICAITNG THE SAME, AND ELECTRICAL CONNECTING STRUCTURE COMPRISING THE SAME

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2015/02/17

技術說明

本發明係有關於一種包含具有Cu3Sn之接合結構及其製備方法。本發明之包含Cu3Sn之接合結構係使用於電性連接一第一基板及一第二基板，其包括：一第一電性連接墊，係包含一第一奈米雙晶銅層；一第二電性連接墊，係包含一第二奈米雙晶銅層；以及至少一介金屬化合物層，其係形成於該第一奈米雙晶銅層及該第二奈米雙晶銅層之間，以電性連接該第一基板及該第二基板，且該介金屬化合物層係包含一Cu3Sn層，其中，該第一奈米雙晶銅層及該第二奈米雙晶銅層之50%以上之體積係分別包括複數個雙晶銅晶粒。 The present invention relates to a connecting structure comprising Cu3Sn and a method for manufacturing the same. The connecting structure comprising Cu3Sn of the present invention can be used to electric connect a first substrate and a second substrate, and the connecting structure comprising Cu3Sn of the present invention comprises: a first electrical pad comprising a first nano-twinned copper layer; a second electrical pad comprising a second nano-twinned copper layer; and at least one intermetallic compound (IMC), which is formed between the first nano-twinned copper layer and the second nano-twinned copper layer, so as to electrically connect the first substrate and the second substrate. In addition, the intermetallic compound comprises a Cu3Sn layer, wherein at least 50% in volume of the first nano-twinned copper layer and the second nano-twinned copper comprises plural grains.

備註

本部(收文號1100065219)同意該校110年10月27日陽明交大研產學字第1100036963號函申請終止維護專利(陽明交大)

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