熱電結構

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

105107690

專利證號

I 581470

專利獲證名稱

熱電結構

專利所屬機關 (申請機關)

國立臺灣科技大學

獲證日期

2017/05/01

技術說明

一般之結晶性材料作為擴散阻障層(如:Ni、Ti) 分佈著晶界(grain boundary) ，而這些晶界可視為通道(pathway)，提供上層與下層原子相互擴散，進而產生界面反應與界面生成相，進而破壞熱電模組之可靠度與耐用度。本發明利用非晶性之金屬玻璃薄膜，因無晶界特性(grain boundary free)，在高溫長時間退火下可有效的抑制相互擴散，扮演極佳之擴散阻障層，且所需之鍍層厚度極薄，約200 nm即可見效，相對一般Ni基或Ti基結晶性阻障層(厚度至少為微米等級)，金屬玻璃鍍膜相對薄，對商用化熱電模組之成本亦有幫助。 There are grain boundaries distributed in the crystralline material, such as nickel or titanium, which commonly used for diffusion barrier. The grain boundaries may serve as the pathway for atom diffusion between two layers, leading to the reaction of two layers and forming intermetallic compound. Thus, the reliability and endurance of thermoelectric module would be reduced. Our invention is to use the amorphous thin-film metallic glass (TFMG), possessing the property of grain boundary-free, as diffusion barrier. TFMG can effectively inhibit the diffusion between metal electrode and thermoelectric substrate during long-time annealing. In addition, the thickness of TFMG is only 200-nm, which is much thinner than typical crystalline coating (Ni or Ti). Thus, the use of TFMG is benificial for reduction of the cost of commercial thermoelectric module.

備註

本部(收文號1110015271)同意該校111年3月17日臺科大研字第1110101906號函申請終止維護專利(國立臺灣科技大學)

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