互補金氧半微機電感測器晶片的製造方法及其裝置

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

109146849

專利證號

I 783338

專利獲證名稱

互補金氧半微機電感測器晶片的製造方法及其裝置

專利所屬機關 (申請機關)

淡江大學學校財團法人淡江大學

獲證日期

2022/11/11

技術說明

本案首倡應用國家晶片中心(TSRI，舊名CIC)最新提供之U18MEMS代工線(聯電0.18微米1P6M標準金氧半積體電路附加微機電微加工)，創新改良利用淺溝槽隔離(shallow trench isolation; STI)結構，有效保護多晶矽感測子結構，成功存活於微機電微加工之電漿乾蝕刻中。直接完成之熱電阻式流速感測器，藉由顯微鏡觀察仍成功存留多晶矽熱電阻，並經量測電阻值驗證，最多只比設計值低6.8%。初步風洞測試成功測得流速變化訊號，在流速量測範圍0-15m/s之內，輸出靈敏度為0.2mV/(m/s)/1.8V bias。 This patent is to use the shallow trench isolation (STI), which herein not only conventionally prevents electric current leakage between adjacent semiconductor devices, but also preserves the polysilicon sensor material from the possible damage from the isotropic dry etch during the MEMS post process of TSRI’s U18MEMS foundry. Our STI protection idea is verified by the microsopic observation, and also from the resistance measurement of the polysilicon sensors with 6.8% error in maximum below the design value. For the flow sensor calibration in a low-speed wind tunnel, the flow speed range is kept under the range of 0-15m/s and the measured sensitivity is 0.2mV/(m/s)/1.8V bias.

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26215656分機2561

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