半導體元件及其製造方法Semiconductor device and fabrication method thereof

專利類型

發明

專利國別 (專利申請國家)

美國

專利申請案號

14/093,056

專利證號

US 9,147,805 B2

專利獲證名稱

半導體元件及其製造方法Semiconductor device and fabrication method thereof

專利所屬機關 (申請機關)

國立臺灣大學

獲證日期

2015/09/29

技術說明

在矽(110)基板上我們製作沿著<1-10>晶軸方向的週期性溝槽作為生長氮化物磊晶結構之基板，我們可以成功達成側向的接合生長，磊晶結構表面沒有裂縫，同時所生長磊晶結構內部應力極小、晶體品質高，而其上所生長製作之發光二極體發光效率高、元件阻抗低。本技術的優點包括缺陷減少、熱膨脹效應較低以及溝槽結構所造成的散射效果可以減少往下傳播而為矽基板所吸收的光子數目，從而達到較高的出光效率。至於熱膨脹效應降低可以避免磊晶層之龜裂。這些優點結合一起可使矽基板發光二極體之發展有所突破。 The comparisons of a crack-free InGaN/GaN quantum-well light-emitting diode (LED) structure of completely coalesced overgrowth on an a-axis-oriented one-dimensional trench-patterned Si (110) substrate with the other two samples grown on flat Si (110) and Si (111) substrates are demonstrated. This sample on patterned Si (110) substrate shows the highest crystal quality, weakest tensile strain, largest internal quantum efficiency, strongest LED output intensity, lowest device resistance, and smallest spectral shift range in increasing injection current. The small spectral shift range indicates the weak quantum-confined Stark effect. The advantages of this sample are attributed to the small lattice mismatch between Si and GaN along the m-axis for reducing dislocation density, the reduced thermal stress along the m-axis through the decrease of nitride/Si contact area, and the minimized upward-propagating dislocation density through the lateral overgrowth along the m-axis.

備註

本部(收文號1110015008)同意該校111年3月16日校研發字第1110018536號函申請終止維護專利(國立臺灣大學)

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