發光二極體

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

099111358

專利證號

I 437730

專利獲證名稱

發光二極體

專利所屬機關 (申請機關)

國立成功大學

獲證日期

2014/05/11

技術說明

吾人首次製作並研討一埋入式p 型氮化鎵/ n 型氮化鎵(元件 A）以及p型氮化鎵 / n 型氮化銦鎵 (元件 B)接面應用在氮化鎵系發光二極體 (LED)之特性。埋入式pn接面所形成的內建能障會使LED元件具有更好的電流橫向散佈能力。此外,電流阻塞效應的減少抑制了LED元件寄生電阻效應。因此,在20 mA的操作電流之下,此種新穎結構能有效降低導通電壓,串聯電阻,以及提升靜電防護能力。在60 mA操作電流的情況下持續1173小時,傳統的LED結構(元件C)有約23%的光效衰減。另ㄧ方面,本發明之LED元件A與B只有約2±0.4%的衰退。這項結果証實了此新穎結構確實能有效降低因電流阻塞而發熱所帶來的光效衰退效應。 GaN-based light-emitting diodes (LEDs) with a p-GaN/n-GaN (device A) and a p-GaN/n-InGaN (device B) buried junctions are firstly fabricated and investigated. Due to the built-in potentials induced by these buried junctions, superior current spreading performance is obtained. In addition, the suppression of current crowding phenomenon yields the reduced parasitic effect. Therefore, under an injection current of 20 mA, improved behaviors including lower turn-on voltage, lower parasitic series resistance, and significantly enhanced electrostatic discharge (ESD) performance are presented. Moreover, after 1173 hours aging test under an operation current of 60 mA, a light degradation of 23 % is found for the device without this buried junction structure (device C). On the other hand, this value is reduced down to 2±0.4 % for the devices A and B with this buried junction structure. Obviously, this significant result is mainly attributed to the improved current-spreading performance.

備註

本部(收文號1060000114)同意該校105年12月30日成大研總字第1054501055號函申請終止維護專利

連絡單位 (專責單位/部門名稱)

企業關係與技轉中心

連絡電話

06-2360524

網址