半導體之貫孔內連接線的製造方法

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

100147037

專利證號

I 482240

專利獲證名稱

半導體之貫孔內連接線的製造方法

專利所屬機關 (申請機關)

國立清華大學

獲證日期

2015/04/21

技術說明

一種半導體之貫孔內連接線的製造方法，包含以下步驟：首先，提供一具有一容槽及一連接表面的模板，該容槽與該連接表面位於該模板的同一側；接著於該容槽內填入一導電材料；將一具有至少一貫孔的基板與該連接表面相接，使該貫孔與該容槽連通；然後加熱該導電材料至一工作溫度，使部分該導電材料形成液態，並由該容槽往該貫孔流入；以及冷卻該導電材料，使該導電材料於該貫孔形成一內連接線。據此，本發明藉由加熱成形的方法製造該內連接線，不僅步驟簡單，節省製程時間，進而可提高製程上的良率及效率且降低製作成本。 A method for fabricating interconnecting lines inside via holes of a semiconductor device comprises steps of: providing a template having a receiving trench and a connection surface both on the same side of the template; filling an electric-conduction material into the receiving trench; connecting a substrate having at least one via hole with the connection surface to interconnect the via hole with the receiving trench; heating the electric-conduction material to a working temperature to liquefy a portion of the electric-conduction material and make it flows from the receiving trench into the via hole; and cooling the electric-conduction material to form an interconnecting line inside the via hole. The present invention fabricates interconnecting lines by a heat-forming method, which features simple steps and has advantages of shorter fabrication time, lower fabrication complexity, higher fabrication efficiency, higher yield and lower fabrication cost.

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