增強型氮化鎵電晶體及其形成方法Enhanced GaN Transistor and the Forming Method Thereof

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

102118636

專利證號

I 497721

專利獲證名稱

增強型氮化鎵電晶體及其形成方法Enhanced GaN Transistor and the Forming Method Thereof

專利所屬機關 (申請機關)

國立交通大學

獲證日期

2015/08/21

技術說明

本發明揭露製作具高輸出電流之增強式氮化鎵電晶體之技術。我們利用InxAl1-xN /AlN之異質接面結構取代傳統之AlGaN/GaN異質接面結構並且於最上層成長p型InxAl1-xN層使之形成P-N接面，可製作出高輸出電流之增強型氮化鎵電晶體。而閘極漏電流也可因鈍化層的加入而降低，得以改善電晶體特性。此技術有助於減少元件待機時之功率損耗、降低元件應用至電路之複雜度，以及提升使空乏式與增強式整合之氮化鎵數位邏輯電路之可行性。 In this patent, we propose a technique of fabricating the enhancement mode GaN based transistor with high output drain current. This technique is achieved by using InxAl1-xN /AlN heterostructures and growth p- InxAl1-xN on the top layer in order to form PN semiconductor junction, which can fabricate enhance mode GaN transistor with high output current. However the gate leakage current would be decrease by adding passivation layer, it can improve the characteristic of transistor. The proposed device can improve the output current to achieve goals of low power consumption under off state of transistors, low complexity of circuit when applying the proposed devices, and possible integration of depletion mode and enhance mode of GaN transistors for GaN digital logic circuits.

備註

連絡單位 (專責單位/部門名稱)

智慧財產權中心

連絡電話

03-5738251

網址