製備薄膜之系統

專利類型

發明

專利國別 (專利申請國家)

中華民國

專利申請案號

103112976

專利證號

I 518198

專利獲證名稱

製備薄膜之系統

專利所屬機關 (申請機關)

中央研究院

獲證日期

2016/01/21

技術說明

本發明係提供一種製備薄膜之系統，特別係用以形成晶圓尺度薄膜，其特徵為：一與反應室相連通的加熱室，該加熱室的加熱單元係設於加熱管路周圍，藉此降低前驅物於管路輸送時凝結的可能性。本發明又提供一種製備薄膜之系統，其特徵為：一設有加熱器之氣體混合單元，藉此溫控式設計，改善氣體混合單元內側表面為大面積且溫度較低，易使前驅物在其內凝結的缺點。本發明更提供一種製備薄膜之系統，其特徵為：一設於反應室和加熱室間的輔助氣體控制閥，藉此有效地精密調整進入反應室前驅物的量，達到晶圓尺度薄膜合成的精密控制。 The present invention is related to a system for preparing films, especially to form wafer-scaled thin films, the system characterized by a heating chamber connected to a reaction chamber, wherein a heating unit is imbedded around a heating line, such that the vaporized precursors will be transferred from the heating line to a gas mixing unit in the reaction chamber immediately, which lower the probability of precursor condensation. Another system for preparing thin films is also provided herein, characterized by a gas mixing unit having a heater. Such temperature-controllable design can improve defects for unavoidable condensation of precursors inside the gas mixing unit due to its large area and lower temperature of inner-surface. A system for preparing thin films is further provided herein, characterized by an assistant control valve between the reaction chamber and the heating chamber to further fine tune the quantity of precursor into the reaction chamber effectively, and achieves the ultimate precise control during wafer-scaled thin films synthesis.

備註

本部(收文號1100073238)同意該校110年12月10日智財字第1100510900號函申請終止維護專利(中研院)

連絡單位 (專責單位/部門名稱)

智財技轉處

連絡電話

02-2787-2508

網址